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Semiconductor Device Engineering
This lecture note covers the following topics: Building block of silicon devices and general band diagram, Semiconductor statistics based on general band diagram, Transport Equation, Relaxation time, PN junction as a basic building block, Voltage limitation, PN junction under light, BJT general operation principle, BJT general opera, CV characteristics of MOS devices , MOSFET mobility, Nonideal MOS characteristics, Trend of the scaled MOSFET structure.
Author(s): Seoul National University
NA Pages 
Lecture Note on Power Semiconductors
This lecture note covers the following topics: Power semiconductor devices, SCR control circuits, Controlled rectifier, Chopper, Inverters, Cycloconverter, Protection, Ratings and failure of power electronics devices, Industrial electronics and applications.
Author(s): Er Srikanta Sahu and Er Debashree Patnaik
109 Pages
Semiconductor Manufacturing Lecture Notes
This note explains statistical modeling and the control of semiconductor fabrication processes and plants. Topics covered includes: design of experiments, response surface modeling, and process optimization, defect and parametric yield modeling, process or device or circuit yield optimization, monitoring, diagnosis, and feedback control of equipment and processes, and analysis and scheduling of semiconductor manufacturing operations.
Author(s): Prof. Duane Boning
NA Pages
Semiconductor Device Engineering
This lecture note covers the following topics: Building block of silicon devices and general band diagram, Semiconductor statistics based on general band diagram, Transport Equation, Relaxation time, PN junction as a basic building block, Voltage limitation, PN junction under light, BJT general operation principle, BJT general opera, CV characteristics of MOS devices , MOSFET mobility, Nonideal MOS characteristics, Trend of the scaled MOSFET structure.
Author(s): Seoul National University
NA Pages
Covered topics are: operation of diodes and bipolar junction transistors, bipolar devices to include the influence of recombination, the physical mechanisms underlying the delays and speed limitations of the devices and to extract equivalent circuit models for the devices.
Author(s): Dr. K. Fobelets
55 Pages